Package structure including a first electronic device, a second electronic device and a plurality of dummy pillars

ABSTRACT

A package structure includes a base material, at least one electronic device, at least one dummy pillar and an encapsulant. The electronic device is electrically connected to the base material. The dummy pillar is disposed on the base material. The encapsulant covers the electronic device and a top end of the dummy pillar.

BACKGROUND 1. Field of the Disclosure

The present disclosure relates to a package structure and amanufacturing method, and to a package structure including at least onedummy pillar and a method for manufacturing the package structure.

2. Description of the Related Art

Along with the rapid development in electronics industry and theprogress of semiconductor processing technologies, semiconductor packagestructures are integrated with an increasing number of electroniccomponents or electronic devices to achieve improved electricalperformance and additional functions. Accordingly, a warpage of thesemiconductor package structure may correspondingly increase. Inaddition, if a gap between two adjacent electronic components orelectronic devices is relatively large, an encapsulant may be recessedto form a dimple corresponding to such gap. Thus, a yield of thesemiconductor package structure may decrease.

SUMMARY

In some embodiments, a package structure includes a base material, atleast one electronic device, at least one dummy pillar and anencapsulant. The electronic device is electrically connected to the basematerial. The dummy pillar is disposed on the base material. Theencapsulant covers the electronic device and a top end of the dummypillar.

In some embodiments, a method for manufacturing a package structureincludes: (a) providing a base material; (b) forming at least one dummypillar on the base material, and electrically connecting at least oneelectronic device to the base material; and (c) forming an encapsulantto cover the at least one electronic device and the at least one dummypillar.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are readilyunderstood from the following detailed description when read with theaccompanying figures. It is noted that various structures may not bedrawn to scale, and dimensions of the various structures may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 2 illustrates an enlarged view of a region “A” in FIG. 1.

FIG. 3 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 4 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 5 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 6 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 7 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 8 illustrates a cross-sectional view of a package structureaccording to some embodiments of the present disclosure.

FIG. 9 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 10 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 11 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 12 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 13 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 14 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 15 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 16 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 17 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 18 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 19 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 20 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 21 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 22 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 23 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 24 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 25 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 26 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 27 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 28 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 29 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 30 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 31 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 32 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 33 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 34 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 35 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 36 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

FIG. 37 illustrates one or more stages of an example of a method formanufacturing a package structure according to some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar components.Embodiments of the present disclosure will be readily understood fromthe following detailed description taken in conjunction with theaccompanying drawings.

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to explain certain aspects of the present disclosure. These are,of course, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed or disposed in direct contact, and mayalso include embodiments in which additional features may be formed ordisposed between the first and second features, such that the first andsecond features may not be in direct contact. In addition, the presentdisclosure may repeat reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

In a comparative embodiment, a semiconductor package structure mayinclude a plurality of electronic components (or electronic devices)electrically connected to a substrate, and an encapsulant (e.g., amolding compound) covers the electronic components (or electronicdevices) and the substrate. Such semiconductor package structure maysuffer from warpage due to a coefficient of thermal expansion (CTE)mismatch between the electronic components, the substrate and theencapsulant (e.g., a molding compound).

In addition, such semiconductor package structure may further include aplurality of interconnection solder balls for electrically connectingthe substrate and an upper wiring structure on the encapsulant and abovethe electronic components. In order to minimize the size of thesemiconductor package structure with an increased number of I/Oconnections, ultra-fine circuit design (e.g., the pad size is less than5 micrometers (μm), and bonding space is less than 10 μm) has to beused. However, a minimum pitch of the solder balls may be about 30micrometers (μm) to 40 μm (e.g., the ball width/ball space may be about20 μm/20 μm), which cannot meet the specification of increasing I/Ocounts. To address such concern, a plurality of high density finepillars may be used to replace the solder balls. However, the formationof such high density fine pillars embedded in the encapsulant is anissue.

At least some embodiments of the present disclosure provide for apackage structure which includes at least one dummy pillar formed beforethe formation of the encapsulant. At least some embodiments of thepresent disclosure further provide for techniques for manufacturing thepackage structure.

FIG. 1 illustrates a cross-sectional view of a package structure 1according to some embodiments of the present disclosure. The packagestructure 1 includes a base material 2, at least one electronic device(including, for example, a first electronic device 11 and a secondelectronic device 12), at least one dummy pillar 13, at least oneconductive pillar 14, an encapsulant 10, an upper wiring structure 3 andat least one external connector 34.

The base material 2 has a first surface 21 and a second surface 22opposite to the first surface 21. The base material 2 may be a carrierfor carrying the electronic device (including, for example, a firstelectronic device 11 and a second electronic device 12). In someembodiments, the base material 2 may be a semiconductor die, asemiconductor chip, a wafer, a panel, a strip, a package substrate or aprinted circuit board. As shown in FIG. 1, the base material 2 includesa main body 23, a passivation layer 24 and a plurality of inner vias 26.The main body 23 has a first surface 231 and a second surface 232opposite to the first surface 231, and includes a plurality of pads 25disposed adjacent to the first surface 231. The second surface 232 ofthe main body 23 is the second surface 22 of the base material 2. Insome embodiments, a material of the main body 23 may includesemiconductor material such as silicon. It is noted that the pads 25 maybe included in a circuit layer disposed on the first surface 231. Thepassivation layer 24 is disposed on and covers the main body 23. Thepassivation layer 24 has a first surface 241 and a second surface 242opposite to the first surface 241, and defines a plurality of openings243 to expose the pads 25. The first surface 241 of the passivationlayer 24 is the first surface 21 of the base material 2. In someembodiments, a material of the passivation layer 24 may include includesan oxide material or a nitride material such as SiO₂ or SiN. The innervias 26 are disposed in the openings 243 of the passivation layer 24,and connect the pads 25. In some embodiments, each of the inner vias 26may include a seed layer and a conductive metal. The seed layer isdisposed on the sidewall of the opening 243 of the passivation layer 24and defines a central hole. The conductive metal fills the central holedefined by the seed layer. The seed layer may include, for example,titanium and/or copper, another metal, or an alloy, and may be formed ordisposed by sputtering. The conductive metal may include, for example,copper, or another metal or combination of metals, and may be formed ordisposed by electroplating. As shown in FIG. 1, the top surfaces of theinner vias 26 are substantially coplanar with the first surface 241 ofthe passivation layer 24 (e.g., the first surface 21 of the basematerial 2). Thus, the inner vias 26 are exposed from the first surface241 of the passivation layer 24 (e.g., the first surface 21 of the basematerial 2), and are used as electrical contacts of the base material 2.In some embodiments, a width of the inner via 26 may be about 2 μm toabout 20 μm.

The electronic device (including, for example, a first electronic device11 and a second electronic device 12) is electrically connected to theinner vias 26 of the base material 2. The electronic device may includeat least one semiconductor chip, at least one package structure and/orat least one passive component. The electronic device may include aplurality of electronic devices (e.g., the first electronic device 11and the second electronic device 12), and the at least one dummy pillar13 and the at least one conductive pillar 14 may be disposed between twoadjacent electronic devices (e.g., the first electronic device 11 andthe second electronic device 12). In some embodiments, the firstelectronic device 11 has a first surface 111 (e.g., an active surface)and a second surface 112 (e.g., a backside surface) opposite to thefirst surface 111, and includes a plurality of first pads 113, a firstisolation layer 114 and a plurality of first connection vias 115. Thefirst pads 113 are disposed adjacent to the first surface 111 of thefirst electronic device 11. The first isolation layer 114 is disposed onand covers the first surface 111 of the first electronic device 11, anddefines a plurality of opening to expose the first pads 113. The firstconnection vias 115 are disposed in the openings of the first isolationlayer 114, and electrically connect the inner vias 26. In someembodiments, each of the first connection vias 115 may include a seedlayer and a conductive metal. Similarly, the second electronic device 12has a first surface 121 (e.g., an active surface) and a second surface122 (e.g., a backside surface) opposite to the first surface 121, andincludes a plurality of second pads 123, a second isolation layer 124and a plurality of second connection vias 125. The second pads 123 aredisposed adjacent to the first surface 121 of the second electronicdevice 12. The second isolation layer 124 is disposed on and covers thefirst surface 121 of the second electronic device 12, and defines aplurality of opening to expose the second pads 123. The secondconnection vias 125 are disposed in the openings of the second isolationlayer 124, and electrically connect the inner vias 26. In someembodiments, each of the second connection vias 125 may include a seedlayer and a conductive metal. As shown in FIG. 1, a thickness of thefirst electronic device 11 may be different from a thickness of thesecond electronic device 12. For example, the thickness of the firstelectronic device 11 may be greater than the thickness of the secondelectronic device 12.

The at least one dummy pillar 13 may be disposed on the first surface 21of the base material 2, and may have no electrical function. That is,the dummy pillar 13 may not be electrically connected to the main body23 or the base material 2. Alternatively, the dummy pillar 13 mayterminate at or stand on the non-circuit area of the base material 2. Inaddition, the dummy pillar 13 may not extend through the encapsulant 10.In some embodiments, the dummy pillar 13 includes a pillar body 132 anda seed layer 131 interposed between the pillar body 132 and the firstsurface 21 of the base material 2. A periphery lateral surface of thepillar body 132 is substantially coplanar with a periphery lateralsurface of the seed layer 131, and a size of the seed layer 131 from atop view is substantially equal to a size of the pillar body 132 from atop view. That is, the seed layer 131 only contacts a bottom surface ofthe pillar body 132, and does not extend to the periphery lateralsurface of the pillar body 132. This is because the dummy pillar 13 isformed before the formation of the encapsulant 10. In some embodiments,the seed layer 131 may be omitted. As shown in FIG. 1, the packagestructure 1 may include a plurality of dummy pillars 13, and heights ofthe dummy pillars 13 may be equal to or different from each other. Insome embodiments, a width of the dummy pillar 13 may be about 10 μm toabout 30 μm, and a space between the dummy pillars 13 may be less than10 μm.

The at least one conductive pillar 14 may be disposed on the firstsurface 21 of the base material 2, and have electrical function. Thatis, the conductive pillar 14 may be electrically connected to the mainbody 23 or the base material 2. Alternatively, the conductive pillar 14may terminate at or stand on the electrical contact (e.g., the innervia) 26 in the circuit area of the base material 2. In addition, theconductive pillar 14 may extend through the encapsulant 10. In someembodiments, the conductive pillar 14 includes an upper pillar body 143,a lower pillar body 142 and a seed layer 141. The lower pillar body 142is interposed between the upper pillar body 143 and the seed layer 141,and the seed layer 141 is interposed between the lower pillar body 142and the first surface 21 of the base material 2. A material of the lowerpillar body 142 may be the same as or different from a material theupper pillar body 143. As shown in FIG. 1, the material of the lowerpillar body 142 is different from the material of the upper pillar body143, and there is a boundary or an interface between the lower pillarbody 142 and the upper pillar body 143. For example, a hardness of theupper pillar body 143 may be greater than a hardness of the lower pillarbody 142. In some embodiments, a height of the lower pillar body 142 ofthe conductive pillar 14 is substantially equal to the height of thepillar body 132 of the dummy pillar 13, and a material of the lowerpillar body 142 of the conductive pillar 14 is the same as a material ofthe pillar body 132 of the dummy pillar 13 since they are formedconcurrently at a same stage.

A periphery lateral surface of the upper pillar body 143, a peripherylateral surface of the lower pillar body 142 and a periphery lateralsurface of the seed layer 141 are substantially coplanar with eachother. A size of the seed layer 141 from a top view is substantiallyequal to a size of the lower pillar body 142 and a size of the upperpillar body 143 from a top view. That is, the seed layer 141 onlycontacts a bottom surface of the lower pillar body 142, and does notextend to the periphery lateral surface of the lower pillar body 142.This is because the conductive pillar 14 is formed before the formationof the encapsulant 10. In some embodiments, the seed layer 141 may beomitted. As shown in FIG. 1, the package structure 1 may include aplurality of conductive pillars 14. In some embodiments, a width of theconductive pillar 14 may be about 10 μm to about 30 μm, and a spacebetween the conductive pillars 14 may be less than 10 μm. A spacebetween the conductive pillar 14 and the dummy pillar 13 may be lessthan 10 μm. Thus, the high density fine conductive pillars 14 thatreplace the solder balls of a comparative embodiment can meet thespecification of the ultra-fine circuit design.

The encapsulant 10 is disposed on the first surface 21 of the basematerial 2, and covers the at least one electronic device (e.g., thefirst electronic device 11 and the second electronic device 12), theperiphery lateral surface of the at least one conductive pillar 14 and atop end of the at least one dummy pillar 13. The encapsulant 10 has afirst surface 101 and a second surface 102 opposite to the first surface101. The second surface 102 of the encapsulant 10 contacts the firstsurface 21 of the base material 2. As shown in FIG. 1, the encapsulant10 covers the second surface 112 and a periphery lateral surface of thefirst electronic device 11, the second surface 122 and a peripherylateral surface of the second electronic device 12, a periphery lateralsurface of the conductive pillar 14, and a top surface and a peripherylateral surface of the dummy pillar 13. That is, the conductive pillars14 extend through the encapsulant 10, and a top surface of each of theconductive pillars 14 is exposed from the first surface 101 of theencapsulant 10. Further, the dummy pillars 13 do not extend through theencapsulant 10, and a portion of the encapsulant 10 is disposed betweenthe top end of the dummy pillar 13 and the upper wiring structure 3.

In some embodiments, the encapsulant 10 may include a first insulationportion 10 a and a second insulation portion 10 b. The first insulationportion 10 a covers the electronic device (e.g., the first electronicdevice 11 and the second electronic device 12), the periphery lateralsurface of the conductive pillar 14 and the top end of the dummy pillar13. The second insulation portion 10 b is embedded in the firstinsulation portion 10 a. A top surface of the first insulation portion10 a is substantially coplanar with a top surface of the secondinsulation portion 10 b and a top surface of the conductive pillar 14.The second insulation portion 10 b may be discontinuous. In addition, amaterial of the first insulation portion 10 a of the encapsulant 10 mayinclude a non-polymer material or an inorganic material, such as anoxide material or a nitride material. For example, the material of thefirst insulation portion 10 a of the encapsulant 10 may include SiO₂ orSiN, and may be formed by physical vapor deposition (PVD). Similarly, amaterial of the second insulation portion 10 b of the encapsulant 10 mayinclude a non-polymer material or an inorganic material, such as anoxide material or a nitride material. For example, the material of thesecond insulation portion 10 b of the encapsulant 10 may include SiO₂ orSiN, and may be formed by physical vapor deposition (PVD). The materialof the second insulation portion 10 b of the encapsulant 10 may be thesame as or different from the material of the first insulation portion10 a of the encapsulant 10.

In one embodiment, a CTE of the silicon material of the main body 23 ofthe base material 2 may be about 4 ppm/° C. to about 6 ppm/° C., and aCTE of the inorganic material of the encapsulant 10 may be less than 10ppm/° C. Thus, the warpage of the package structure 1 is relativelysmall due to the relatively small CTE mismatch between the base material2 and the encapsulant 10.

The upper wiring structure 3 is disposed on the first surface 101 of theencapsulant 10, and electrically connected to the base material 2through the conductive pillars 14. As shown in FIG. 1, the upper wiringstructure 3 may include a first circuit layer 15, a first dielectriclayer 16, a second circuit layer 17, a second dielectric layer 18 and athird circuit layer 19. The first circuit layer 15 may be a fan-outcircuit layer or a redistribution layer (RDL). The first circuit layer15 is disposed on the first surface 101 of the encapsulant 10, and mayinclude a plurality of traces and a plurality of pads. The pads of thefirst circuit layer 15 may cover and contact the top surface of theconductive pillar 14. A line width/line space (L/S) of the first circuitlayer 15 may be less than or equal to about 2 μm/about 2 μm, or lessthan or equal to about 1.8 μm/about 1.8 μm. In some embodiments, thefirst circuit layer 15 may include a seed layer 151 and a metal layer152. The seed layer 151 is disposed on the first surface 101 of theencapsulant 10, and the metal layer 152 is disposed on the seed layer151. The seed layer 151 may include, for example, titanium and/orcopper, another metal, or an alloy, and may be formed or disposed bysputtering. The metal layer 152 may include, for example, copper, oranother metal or combination of metals, and may be formed or disposed byelectroplating.

The first dielectric layer 16 is disposed on and covers the firstcircuit layer 15 and the first surface 101 of the encapsulant 10, anddefines a plurality of openings 163 to expose portions of the firstcircuit layer 15. The first dielectric layer 16 may include, or beformed from, a photoresist layer, a passivation layer, a cured photosensitive material, a cured photoimageable dielectric (PID) materialsuch as epoxy or polyimide (PI) including photoinitiators, or acombination of two or more thereof. The second circuit layer 17 isdisposed on the first dielectric layer 16, and may include a pluralityof traces and a plurality of pads. Portions of the second circuit layer17 may extend into the openings 163 of the first dielectric layer 16 tocontact the first circuit layer 15 and forms a plurality of conductivevias. A width of each of the conductive vias of the second circuit layer17 may be less than 20 μm. An L/S of the second circuit layer 17 may begreater than or equal to the L/S of the first circuit layer 15. In someembodiments, the second circuit layer 17 may include a seed layer 171and a metal layer 172 disposed on the seed layer 171. Further, thesecond dielectric layer 18 is disposed on and covers the second circuitlayer 17 and the first dielectric layer 16, and defines a plurality ofopenings 183 to expose portions of the second circuit layer 17. Amaterial of the second dielectric layer 18 may be the same as ordifferent from a material of the first dielectric layer 16. In addition,the third circuit layer 19 is disposed on the second dielectric layer18, and may include a plurality of under bump metallurgies (UBMs)disposed in the openings 183 of the second dielectric layer 18 tocontact the second circuit layer 17. In some embodiments, the thirdcircuit layer 19 may include a seed layer 191 and a metal layer 192disposed on the seed layer 191.

The at least one external connector 34 is disposed on and electricallyconnected to the upper wiring structure 3. As shown in FIG. 1, thepackage structure 1 includes a plurality of external connectors 34 forexternal connection. The external connectors 34 may be solder balls thatare disposed on and electrically connected to respective ones of theunder bump metallurgies (UBMs) of the third circuit layer 19 of theupper wiring structure 3.

FIG. 2 illustrates an enlarged view of a region “A” in FIG. 1. Adistance between a top surface (e.g., the second surface 112) of thefirst electronic device 11 and a top surface (e.g., the first surface21) of the base material 2 is defined as a first distance D₁. A distancebetween a top surface (e.g., the second surface 122) of the secondelectronic device 12 and the top surface (e.g., the first surface 21) ofthe base material 2 is defined as a second distance D₂. The firstdistance D₁ may be equal to or different from the second distance D₂. Insome embodiments, width W of a gap 27 between the first electronicdevice 11 and the second electronic device 12 is greater than 0.45 timesa sum of the first distance D₁ and the second distance D₂. That is,W>0.45(D₁+D₂). In a comparative embodiment, according to experience andknowledge of those skilled in the art, if the conductive pillar(s) 14and the dummy pillar(s) 13 between the first electronic device 11 andthe second electronic device 12 are omitted, the encapsulant 10 willdefine a deep dimple in the gap 27 since the encapsulant 10 may beformed by deposition. Such deep dimple is recessed from a top surface(e.g., the first surface 101) of the encapsulant 10. When an externalforce is applied to the package structure 1 (such as a contact or hit tothe package structure 1 during transportation), a defect (e.g., a crackor a void) will occur and extend from a bottom of the deep dimple intothe interior of the package structure 1. Thus, the functions of thefirst electronic device 11 and the second electronic device 12 will beadversely affected. In another comparative embodiment, if only oneconductive pillar 14 or only one row of conductive pillars 14 is/aredisposed between the first electronic device 11 and the secondelectronic device 12, such dimple cannot be eliminated completely.Therefore, in the package structure 1 illustrated in FIG. 1 and FIG. 2,the dummy pillar(s) 13 is/are disposed between the first electronicdevice 11 and the second electronic device 12, such dimple can beeliminated completely, and the defect (e.g., a crack or a void) can beavoided. Further, the material of the dummy pillar(s) 13 may be solidmetal, thus, the strength of the total package structure 1 is improved.In addition, the encapsulant 10 may include two or more insulationportions (e.g., the first insulation portion 10 a and the secondinsulation portion 10 b); thus, an internal stress of the encapsulant 10may be reduced. In some embodiments, the conductive pillar 14 may be amulti-pillar that may include two or more pillar bodies (e.g., the upperpillar body 143 and the lower pillar body 142); thus, the entire topsurface of the conductive pillar 14 may be exposed from the top surface(e.g., the first surface 101) of the encapsulant 10 after a grindingprocess, and the reliability of the bonding between the conductivepillar(s) 14 and the upper wiring structure 3 is improved. In addition,in some embodiments, the dummy pillar(s) 13 (and the conductivepillar(s) 14) is/are formed on the base material 2 before the formationof the encapsulant 10; thus, a bonding force between the dummy pillar(s)13 and the base material 2 is greater than a bonding force between thedummy pillar(s) 13 and the base material 2 in a comparative embodimentin which the dummy pillar(s) 13 is/are formed on the base material 2after the formation of the encapsulant 10.

FIG. 3 illustrates a cross-sectional view of a package structure 1 aaccording to some embodiments of the present disclosure. The packagestructure 1 a is similar to the package structure 1 shown in FIG. 1,except that the conductive pillar(s) 14 disposed between the firstelectronic device 11 and the second electronic device 12 shown in FIG. 1is/are replaced by the dummy pillar(s) 13 a shown in FIG. 3. Thus, onlydummy pillar(s) 13, 13 a is/are disposed between the first electronicdevice 11 and the second electronic device 12, and there is noconductive pillar 14 disposed between the first electronic device 11 andthe second electronic device 12. In some embodiments, the dummy pillar13 a may be disposed on the first surface 21 of the base material 2, andmay have no electrical function. That is, the dummy pillar 13 a may notbe electrically connected to the main body 23 or the base material 2. Inaddition, the dummy pillar 13 a may not extend through the encapsulant10. In some embodiments, the dummy pillar 13 a includes a pillar body132 a and a seed layer 131 a interposed between the pillar body 132 aand the first surface 21 of the base material 2. A periphery lateralsurface of the pillar body 132 a is substantially coplanar with aperiphery lateral surface of the seed layer 131 a, and a size of theseed layer 131 a from a top view is substantially equal to a size of thepillar body 132 a from a top view. As shown in FIG. 3, a height of thedummy pillar(s) 13 near the thicker first electronic device 11 isgreater than a height of the dummy pillar(s) 13 a near the thinnersecond electronic device 12.

FIG. 4 illustrates a cross-sectional view of a package structure 1 baccording to some embodiments of the present disclosure. The packagestructure 1 b is similar to the package structure 1 shown in FIG. 1,except that a conductive structure 3 b is further interposed between theupper wiring structure 3 and the encapsulant 10. The conductivestructure 3 b may include a fourth circuit layer 15 b, an upperpassivation layer 24 b, a first electronic device 11 b, a secondelectronic device 12 b, at least one dummy pillar 13 b, at least oneconductive pillar 14 b and an upper encapsulant 10′. The fourth circuitlayer 15 b is disposed on the first surface 101 of the encapsulant 10,and may include a plurality of traces and a plurality of pads. The upperpassivation layer 24 b covers the fourth circuit layer 15 b and thefirst surface 101 of the encapsulant 10, and may include a plurality ofinner vias extending through the upper passivation layer 24 b andcontacting the fourth circuit layer 15 b. The first electronic device 11b and the second electronic device 12 b are substantially the same asthe first electronic device 11 and the second electronic device 12,respectively. The first electronic device 11 b and the second electronicdevice 12 b are electrically connected to the inner vias of the upperpassivation layer 24 b. The at least one dummy pillar 13 b and the atleast one conductive pillar 14 b are substantially the same as the dummypillar 13 and the conductive pillar 14, respectively. The dummypillar(s) 13 b may be disposed on the top surface of the upperpassivation layer 24 b, and may have no electrical function. Inaddition, the dummy pillar 13 b may not extend through the encapsulant10′. The conductive pillar(s) 14 b may be disposed on the top surface ofthe upper passivation layer 24 b, and have electrical function. That is,the conductive pillar 14 b may be electrically connected to the fourthcircuit layer 15 b. In addition, the conductive pillar 14 b may extendthrough the encapsulant 10′.

The encapsulant 10′ is disposed on the top surface of the upperpassivation layer 24 b, and covers the first electronic device 11 b andthe second electronic device 12 b, the periphery lateral surface of theconductive pillar 14 b and a top end of the dummy pillar 13 b. In someembodiments, the encapsulant 10′ may include a first insulation portion10 a′ and a second insulation portion 10 b′ that are substantially thesame as the first insulation portion 10 a and the second insulationportion 10 b, respectively.

FIG. 5 illustrates a cross-sectional view of a package structure 1 caccording to some embodiments of the present disclosure. The packagestructure 1 c is similar to the package structure 1 shown in FIG. 1,except for the structures of the conductive pillars 14 c. As shown inFIG. 5, the conductive pillar 14 c includes a seed layer 141 and apillar body 144. One end of the pillar body 144 contacts the seed layer141, and the other end of the pillar body 144 contacts the seed layer151 of the first circuit layer 15. That is, the pillar body 144 of theconductive pillar 14 c is a monolithic structure.

FIG. 6 illustrates a cross-sectional view of a package structure 1 daccording to some embodiments of the present disclosure. The packagestructure 1 d is similar to the package structure 1 shown in FIG. 1,except for the structures of the conductive pillars 14 d. As shown inFIG. 6, the conductive pillar 14 d includes a seed layer 141, a lowerpillar body 142, an upper pillar body 143 and an intermediate pillarbody 145. The seed layer 141, the lower pillar body 142 and the upperpillar body 143 of the conductive pillar 14 d of FIG. 6 is similar tothe seed layer 141, the lower pillar body 142 and the upper pillar body143 of the conductive pillar 14 of FIG. 1, respectively. Theintermediate pillar body 145 is interposed between the lower pillar body142 and the upper pillar body 143.

FIG. 7 illustrates a cross-sectional view of a package structure 1 eaccording to some embodiments of the present disclosure. The packagestructure 1 e is similar to the package structure 1 shown in FIG. 1,except for a structure of the main body 23 of the base material 2. Asshown in FIG. 7, the main body 23 defines a plurality of openings 233 toexpose the pads 25, and includes a lower circuit layer 25. A portion ofthe lower circuit layer 25 is disposed on the second surface 232 of themain body 23 to form at least one lower pad, and another portion of thelower circuit layer 25 is disposed in the openings 233 to contact thepads 25 to form at least one lower via. In some embodiments, the lowercircuit layer 25 may include a dielectric layer 251, a seed layer 252and a metal layer 253. A portion of the dielectric layer 251 is disposedon the sidewall of the opening 233 and defines a central hole, andanother portion of the dielectric layer 251 is disposed on the secondsurface 232 of the main body 23. The seed layer 252 is disposed on thedielectric layer 251 and does not fill the central hole. The metal layer253 is disposed on the seed layer 252 and fills the central hole.

FIG. 8 illustrates a cross-sectional view of a package structure 4according to some embodiments of the present disclosure. The packagestructure 4 may be a double-side molded structure, and includes a basematerial 5, at least one electronic device (including, for example, atleast one first upper electronic device 41, at least one second upperelectronic device 42, at least one first lower electronic device 43 andat least one second lower electronic device 44), at least oneencapsulant (including, for example, an upper encapsulant 45 and a lowerencapsulant 46) and a plurality of dummy pillars (including, forexample, at least one first upper dummy pillar 61, at least one secondupper dummy pillar 62, at least one third upper dummy pillar 63, atleast one first lower dummy pillar 64, at least one second lower dummypillar 65) and at least one external connector 47.

The base material 5 may be a package substrate or a printed circuitboard. A material of the base material 5 may be organic such asbismaleimide triazine (BT), FR4 or FR5. The base material 5 has an uppersurface 51 and a lower surface 52 opposite to the upper surface 51, andincludes an upper circuit layer disposed adjacent to or disposed on theupper surface 51 and a lower circuit layer disposed adjacent to ordisposed on the lower surface 52. The upper circuit layer may include aplurality of traces, a plurality of conductive pads and a plurality ofpillar pads 53. In some embodiments, the pillar pads 53 may beelectrically isolated from the traces and the conductive pads. Further,the lower circuit layer may include a plurality of traces, a pluralityof conductive pads, a plurality of pillar pads 54 and a plurality ofbonding pads 55. In some embodiments, the pillar pads 54 may beelectrically isolated from the traces, the conductive pads and thebonding pads 55.

The first upper electronic device 41 and the second upper electronicdevice 42 are electrically connected to the upper circuit layer on theupper surface 51 of the base material 5. In some embodiments, the firstupper electronic device 41 may be a semiconductor chip, and the secondupper electronic device 42 may be a passive component. The first lowerelectronic device 43 and the second lower electronic device 44 areelectrically connected to the lower circuit layer on the lower surface52 of the base material 5. In some embodiments, the first lowerelectronic device 43 may be a semiconductor chip, and the second lowerelectronic device 44 may be a passive component.

The dummy pillars (including, for example, the first upper dummy pillar61, the second upper dummy pillar 62, the third upper dummy pillar 63,the first lower dummy pillar 64 and the second lower dummy pillar 65)may have no electrical function. The first upper dummy pillar 61, thesecond upper dummy pillar 62 and the third upper dummy pillar 63 aredisposed on the pillar pads 53. At least two or three of the dummypillars 61, 62, 63 have different heights. As shown in FIG. 8, a heightof the dummy pillar near the center of the base material 5 is less thana height of the dummy pillar away from the center of the base material5. For example, the first upper dummy pillar 61 is nearer to or closerto the center of the base material 5 than the second upper dummy pillar62 is. Thus, a height of the first upper dummy pillar 61 is less than aheight of the second upper dummy pillar 62. Further, the second upperdummy pillar 62 is nearer to or closer to the center of the basematerial 5 than the third upper dummy pillar 63 is. Thus, a height ofthe second upper dummy pillar 62 is less than a height of the thirdupper dummy pillar 63. Similarly, the first lower dummy pillar 64 andthe second lower dummy pillar 65 are disposed on the pillar pads 54. Thedummy pillars 64, 65 have different heights. For example, the firstlower dummy pillar 64 is nearer to or closer to the center of the basematerial 5 than the second lower dummy pillar 65 is. Thus, a height ofthe first lower dummy pillar 64 is less than a height of the secondlower dummy pillar 65.

As shown in FIG. 8, the dummy pillars 61, 62, 63 may not extend throughthe upper encapsulant 45, and the dummy pillars 64, 65 may not extendthrough the lower encapsulant 46. Thus, the dummy pillars 61, 62, 63 maynot exposed from the upper encapsulant 45, and the dummy pillars 64, 65may not exposed from the lower encapsulant 46. In addition, a structureof each the dummy pillars 61, 62, 63, 64, 65 is similar to a structureof the dummy pillar 13 of FIG. 1. In some embodiments, the first upperdummy pillar 61 includes a pillar body 612 and a seed layer 611interposed between the pillar body 612 and the pillar pad 53. Aperiphery lateral surface of the pillar body 612 is substantiallycoplanar with a periphery lateral surface of the seed layer 611, and asize of the seed layer 611 from a top view is substantially equal to asize of the pillar body 612 from a top view. In some embodiments, theseed layer 611 may be omitted. Further, the second upper dummy pillar 62includes a pillar body 622 and a seed layer 621 interposed between thepillar body 622 and the pillar pad 53. The third upper dummy pillar 63includes a pillar body 632 and a seed layer 631 interposed between thepillar body 632 and the pillar pad 53. The first lower dummy pillar 64includes a pillar body 642 and a seed layer 641 interposed between thepillar body 642 and the pillar pad 54. The second lower dummy pillar 65includes a pillar body 652 and a seed layer 651 interposed between thepillar body 652 and the pillar pad 54.

As shown in FIG. 8, the dummy pillars 61, 62, 63, 64, 65 have the samewidth. However, in other embodiments, the dummy pillars 61, 62, 63, 64,65 may have different widths. In one embodiment, a width of the dummypillar near the center of the base material 5 is less than a width ofthe dummy pillar away from the center of the base material 5. Forexample, the first upper dummy pillar 61 is nearer to or closer to thecenter of the base material 5 than the second upper dummy pillar 62 is.Thus, a width of the first upper dummy pillar 61 is less than a width ofthe second upper dummy pillar 62. Further, the second upper dummy pillar62 is nearer to or closer to the center of the base material 5 than thethird upper dummy pillar 63 is. Thus, a width of the second upper dummypillar 62 is less than a width of the third upper dummy pillar 63.Similarly, the first lower dummy pillar 64 is nearer to or closer to thecenter of the base material 5 than the second lower dummy pillar 65 is.Thus, a width of the first lower dummy pillar 64 is less than a width ofthe second lower dummy pillar 65.

In one embodiment, a width of the dummy pillar near the center of thebase material 5 is greater than a width of the dummy pillar away fromthe center of the base material 5. For example, the first upper dummypillar 61 is nearer to or closer to the center of the base material 5than the second upper dummy pillar 62 is. Thus, a width of the firstupper dummy pillar 61 is greater than a width of the second upper dummypillar 62. Further, the second upper dummy pillar 62 is nearer to orcloser to the center of the base material 5 than the third upper dummypillar 63 is. Thus, a width of the second upper dummy pillar 62 isgreater than a width of the third upper dummy pillar 63. Similarly, thefirst lower dummy pillar 64 is nearer to or closer to the center of thebase material 5 than the second lower dummy pillar 65 is. Thus, a widthof the first lower dummy pillar 64 is greater than a width of the secondlower dummy pillar 65.

The upper encapsulant 45 covers the upper electronic devices (e.g., thefirst upper electronic device 41 and the second upper electronic device42) and the upper dummy pillars (e.g., the first upper dummy pillar 61,the second upper dummy pillar 62 and the third upper dummy pillar 63).Thus, the upper dummy pillars (e.g., the first upper dummy pillar 61,the second upper dummy pillar 62 and the third upper dummy pillar 63)are embedded in the upper encapsulant 45. Similarly, the lowerencapsulant 46 covers the lower electronic devices (e.g., the firstlower electronic device 43 and the second lower electronic device 44)and the lower dummy pillars (e.g., the first lower dummy pillar 64 andthe second lower dummy pillar 65). Thus, the lower dummy pillars (e.g.,the first lower dummy pillar 64 and the second lower dummy pillar 65)are embedded in the lower encapsulant 46. The upper encapsulant 45 andthe lower encapsulant 46 may be molding compounds with or withoutfillers.

As shown in FIG. 8, the lower encapsulant 46 does not cover the bondingpads 55. The external connectors 47 (such as solder balls) are disposedon and electrically connected to the bonding pads 55 on the lowersurface 52 of the base material 5. Alternatively, the upper circuitlayer of the base material 5 may further include a plurality of bondingpads that are not covered by the upper encapsulant 45, and the externalconnectors 47 may be disposed on and electrically connected to thebonding pads on the upper surface 51 of the base material 5.

In the embodiment illustrated in FIG. 8, a height of the dummy pillaraway from the center of the base material 5 is greater than a height ofthe dummy pillar near the center of the base material 5. In acomparative embodiment without the dummy pillars 61, 62, 63, 64, 65, awarpage may occur to the package structure due to the CTE mismatchbetween the base material 5 and the encapsulants 45, 46. The peripheryof the base material 5 may have a largest warpage, and the center of thebase material 5 may have a smallest warpage. Thus, the arrangement ofthe dummy pillars 61, 62, 63, 64, 65 of FIG. 8 may balance and reducesuch warpage. Further, the material of the dummy pillars 61, 62, 63, 64,65 may be solid metal, which may improve the strength of the packagestructure 4. In addition, the dummy pillars 61, 62, 63, 64, 65 embeddedin the encapsulants 45, 46 may improve the adhesion between theencapsulants 45, 46 and the base material 5

FIG. 9 through FIG. 24 illustrate a method for manufacturing a packagestructure according to some embodiments of the present disclosure. Insome embodiments, the method is for manufacturing the package structure1 shown in FIG. 1.

Referring to FIG. 9, a base material 2 is provided. The base material 2has a first surface 21 and a second surface 22 opposite to the firstsurface 21. The base material 2 may be a carrier, and a shape of thebase material 2 may be, for example, substantially circular, elliptical,rectangular or square. In some embodiments, the base material 2 includesa main body 23 and a passivation layer 24. The main body 23 has a firstsurface 231 and a second surface 232 opposite to the first surface 231,and includes a plurality of pads 25 disposed adjacent to the firstsurface 231. The passivation layer 24 is disposed on and covers the mainbody 23. The passivation layer 24 has a first surface 241 and a secondsurface 242 opposite to the first surface 241, and defines a pluralityof openings 243 to expose the pads 25.

Referring to FIG. 10, a plurality of openings 243 are formed in thepassivation layer 24 to expose the pads 25. Then, a plurality of innervias 26 are formed or disposed in the openings 243 of the passivationlayer 24, and connect the pads 25. In some embodiments, each of theinner vias 26 may include a seed layer and a conductive metal. Then, agrinding process is conducted to the first surface 21 of the basematerial 2. Thus, the top surfaces of the inner vias 26 aresubstantially coplanar with the first surface 241 of the passivationlayer 24 (e.g., the first surface 21 of the base material 2). The innervias 26 are exposed from the first surface 241 of the passivation layer24 (e.g., the first surface 21 of the base material 2), and are used aselectrical contacts of the base material 2. Then, a seed layer 70 isformed or disposed on the first surface 21 of the base material 2 tocover the top surfaces of the inner vias 26 and the first surface 241 ofthe passivation layer 24 by a physical vapor deposition (PVD) techniqueor other suitable techniques. Then, a first photoresist layer 72 isformed or disposed on the seed layer 70.

Referring to FIG. 11, a plurality of opening 723 is formed in the firstphotoresist layer 72 to expose portions of the seed layer 70. Then, afirst metal material is formed or disposed in the opening 723 of thefirst photoresist layer 72 by, for example, plating, so as to contactthe exposed portions of the seed layer 70 and form at least one pillarbody 132 and at least one lower pillar body 142. The lower pillar body142 corresponds to the inner via 26.

Referring to FIG. 12, the first photoresist layer 72 is removed. Then, asecond photoresist layer 74 is formed or disposed on the seed layer 70to cover the pillar body 132 and the lower pillar body 142.

Referring to FIG. 13, a plurality of opening 743 is formed in the secondphotoresist layer 74 to expose the lower pillar body 142. Then, a secondmetal material is formed or disposed in the opening 743 of the secondphotoresist layer 74 by, for example, plating, so as to contact theexposed lower pillar body 142 and form at least one upper pillar body143.

Referring to FIG. 14, the second photoresist layer 74 is removed. Then,a portion of the seed layer 70 that is not covered by the pillar body132 and the lower pillar body 142 is removed by, for example, etching.Meanwhile, at least one dummy pillar 13 and at least one conductivepillar 14 are formed. In some embodiments, the dummy pillar 13 includesa pillar body 132 and a seed layer 131 interposed between the pillarbody 132 and the first surface 21 of the base material 2. Further, theconductive pillar 14 includes an upper pillar body 143, a lower pillarbody 142 and a seed layer 141. The lower pillar body 142 is interposedbetween the upper pillar body 143 and the seed layer 141, and the seedlayer 141 is interposed between the lower pillar body 142 and the firstsurface 21 of the base material 2. In some embodiments, a height of thelower pillar body 142 of the conductive pillar 14 is substantially equalto the height of the pillar body 132 of the dummy pillar 13, and amaterial of the lower pillar body 142 of the conductive pillar 14 is thesame as a material of the pillar body 132 of the dummy pillar 13 sincethey are formed concurrently at a same stage. A height of the conductivepillar 14 is greater than a height of the dummy pillar 13.

Referring to FIG. 15, at least one electronic device (including, forexample, a first electronic device 11 and a second electronic device 12)is electrically connected to the inner vias 26 of the base material 2.Thus, the at least one dummy pillar 13 and the at least one conductivepillar 14 may be disposed between two adjacent electronic devices (e.g.,the first electronic device 11 and the second electronic device 12). Insome embodiments, the first electronic device 11 has a first surface 111(e.g., an active surface) and a second surface 112 (e.g., a backsidesurface) opposite to the first surface 111, and includes a plurality offirst pads 113, a first isolation layer 114 and a plurality of firstconnection vias 115. The second electronic device 12 has a first surface121 (e.g., an active surface) and a second surface 122 (e.g., a backsidesurface) opposite to the first surface 121, and includes a plurality ofsecond pads 123, a second isolation layer 124 and a plurality of secondconnection vias 125.

Referring to FIG. 16, a first insulation portion 10 a is formed ordisposed to cover the second surface 112 and a periphery lateral surfaceof the first electronic device 11, the second surface 122 and aperiphery lateral surface of the second electronic device 12, aperiphery lateral surface of the conductive pillar 14, and a top surfaceand a periphery lateral surface of the dummy pillar 13. A material ofthe first insulation portion 10 a may include a non-polymer material oran inorganic material, such as an oxide material or a nitride material.For example, the material of the first insulation portion 10 a mayinclude SiO₂ or SiN, and may be formed by physical vapor deposition(PVD). That is, the first insulation portion 10 a may not be formed by amolding process, and a top surface of the first insulation portion 10 amay be a non-flat surface.

Referring to FIG. 17, a second insulation portion 10 b is formed ordisposed to cover the first insulation portion 10 a. A material of thesecond insulation portion 10 b may include a non-polymer material or aninorganic material, such as an oxide material or a nitride material. Forexample, the material of the second insulation portion 10 b may includeSiO₂ or SiN, and may be formed by physical vapor deposition (PVD). Thatis, the second insulation portion 10 b may not be formed by a moldingprocess, and a top surface of the second insulation portion 10 b may bea non-flat surface.

Referring to FIG. 18, a thinning process or flattening process isconducted to remove portions of the first insulation portion 10 a andthe second insulation portion 10 b by, for example, grinding. Meanwhile,an encapsulant 10 is formed. The encapsulant 10 has a first surface 101and a second surface 102 opposite to the first surface 101, and includesthe first insulation portion 10 a and the second insulation portion 10b. A top surface of the first insulation portion 10 a is substantiallycoplanar with a top surface of the second insulation portion 10 b and atop surface of the conductive pillar 14. That is, the top surfaces ofthe conductive pillars 14 are exposed from the first surface 101 of theencapsulant 10. In addition, the second insulation portion 10 b may bediscontinuous. As shown in FIG. 18, the encapsulant 10 covers the secondsurface 112 and a periphery lateral surface of the first electronicdevice 11, the second surface 122 and a periphery lateral surface of thesecond electronic device 12, a periphery lateral surface of theconductive pillar 14, and a top surface and a periphery lateral surfaceof the dummy pillar 13. That is, the conductive pillars 14 extendthrough the encapsulant 10, and a top surface of each of the conductivepillars 14 is exposed from the first surface 101 of the encapsulant 10.Further, the dummy pillars 13 do not extend through the encapsulant 10,and are not exposed from the encapsulant 10.

Referring to FIG. 19 to FIG. 23, an upper wiring structure 3 is formedor disposed on the encapsulant 10. The upper wiring structure 3 iselectrically connected to the base material 2 through the conductivepillar(s) 14. The formation of the upper wiring structure 3 may bedescribed as follows. Referring to FIG. 19, a first circuit layer 15 isformed or disposed on the first surface 101 of the encapsulant 10, andmay include a plurality of traces and a plurality of pads. The pads ofthe first circuit layer 15 may cover and contact the top surface of theconductive pillar 14. In some embodiments, the first circuit layer 15may include a seed layer 151 and a metal layer 152. The seed layer 151is disposed on the first surface 101 of the encapsulant 10, and themetal layer 152 is disposed on the seed layer 151.

Referring to FIG. 20, a first dielectric layer 16 is formed or disposedon and covers the first circuit layer 15 and the first surface 101 ofthe encapsulant 10. Then, a plurality of openings 163 are formed in thefirst dielectric layer 16 to expose portions of the first circuit layer15. Then, a seed layer 76 is formed on the first dielectric layer 16 andin the openings 163 of the first dielectric layer 16.

Referring to FIG. 21, a second circuit layer 17 is formed or disposed onthe first dielectric layer 16, and may include a plurality of traces anda plurality of pads. In some embodiments, the second circuit layer 17may include a seed layer 171 and a metal layer 172 disposed on the seedlayer 171. The seed layer 171 is formed by etching the seed layer 76.Portions of the second circuit layer 17 may extend into the openings 163of the first dielectric layer 16 to contact the first circuit layer 15and forms a plurality of conductive vias.

Referring to FIG. 22, a second dielectric layer 18 is formed or disposedon and covers the second circuit layer 17 and the first dielectric layer16. A material of the second dielectric layer 18 may be the same as ordifferent from a material of the first dielectric layer 16. Then, aplurality of openings 183 are formed in the second dielectric layer 18to expose portions of the second circuit layer 17.

Referring to FIG. 23, a third circuit layer 19 is formed or disposed onthe second dielectric layer 18, and may include a plurality of underbump metallurgies (UBMs) disposed in the openings 183 of the seconddielectric layer 18 to contact the second circuit layer 17. In someembodiments, the third circuit layer 19 may include a seed layer 191 anda metal layer 192 disposed on the seed layer 191. Meanwhile, an upperwiring structure 3 is formed.

Referring to FIG. 24, at least one external connector 34 is formed ordisposed on and electrically connected to the upper wiring structure 3.As shown in FIG. 24, the external connector 34 may be solder balls thatare disposed on and electrically connected to respective ones of theunder bump metallurgies (UBMs) of the third circuit layer 19 of theupper wiring structure 3. Then, a singulation process is conducted toobtain a plurality of package structures 1 of FIG. 1.

FIG. 25 through FIG. 37 illustrate a method for manufacturing a packagestructure according to some embodiments of the present disclosure. Insome embodiments, the method is for manufacturing the package structure4 shown in FIG. 8.

Referring to FIG. 25, a base material 5 is provided. The base material 5may be a package substrate or a printed circuit board. The base material5 has an upper surface 51 and a lower surface 52 opposite to the uppersurface 51, and includes an upper circuit layer disposed adjacent to ordisposed on the upper surface 51 and a lower circuit layer disposedadjacent to or disposed on the lower surface 52. The upper circuit layermay include a plurality of traces, a plurality of conductive pads and aplurality of pillar pads 53. Further, the lower circuit layer mayinclude a plurality of traces, a plurality of conductive pads, aplurality of pillar pads 54 and a plurality of bonding pads 55. Then, atleast one upper electronic device (e.g., at least one first upperelectronic device 41 and/or at least one second upper electronic device42) is electrically connected to the upper circuit layer on the uppersurface 51 of the base material 5.

Referring to FIG. 26, a seed layer 78 is formed or disposed on andcovers the upper surface 51 of the base material 5, the upper electronicdevice (e.g., the first upper electronic device 41 and/or the secondupper electronic device 42) and the pillar pads 53. Then, a thirdphotoresist layer 80 is formed or disposed on and covers the seed layer78.

Referring to FIG. 27, a plurality of openings 803 are formed in thethird photoresist layer 80 to expose portion(s) of the seed layer 78corresponding to the pillar pad(s) 53. Then, a first metal material isformed or disposed in the openings 803 of the third photoresist layer 80by, for example, plating, so as to contact the exposed portion(s) of theseed layer 78 and form at least one pillar body 612.

Referring to FIG. 28, the third photoresist layer 80 is removed. Then, afourth photoresist layer 82 is formed or disposed on the seed layer 78to cover the pillar body 612.

Referring to FIG. 29, a plurality of openings 823 is formed in thefourth photoresist layer 82 to expose portion(s) of the seed layer 78.Then, a second metal material is formed or disposed in the openings 823of the fourth photoresist layer 82 by, for example, plating, so as tocontact the exposed portion(s) of the seed layer 78 and form at leastone pillar body 622. A height of the pillar body 622 is greater than aheight of the pillar body 612.

Referring to FIG. 30, the fourth photoresist layer 82 is removed. Then,a fifth photoresist layer 84 is formed or disposed on the seed layer 78to cover the pillar body 612 and the pillar body 622.

Referring to FIG. 31, a plurality of openings 843 is formed in the fifthphotoresist layer 84 to expose portion(s) of the seed layer 78. Then, athird metal material is formed or disposed in the openings 843 of thefifth photoresist layer 84 by, for example, plating, so as to contactthe exposed portion(s) of the seed layer 78 and form at least one pillarbody 632. A height of the pillar body 632 is greater than a height ofthe pillar body 622.

Referring to FIG. 32, the fifth photoresist layer 84 is removed. Then,portions of the seed layer 78 that is not covered by the pillar bodies612, 622, 632 are removed by, for example, etching. Meanwhile, at leastone first upper dummy pillar 61, at least one second upper dummy pillar62 and at least one third upper dummy pillar 63 are formed or disposedon the pillar pads 53. In some embodiments, the first upper dummy pillar61 includes the pillar body 612 and a seed layer 611 interposed betweenthe pillar body 612 and the pillar pad 53. Further, the second upperdummy pillar 62 includes the pillar body 622 and a seed layer 621interposed between the pillar body 622 and the pillar pad 53. The thirdupper dummy pillar 63 includes the pillar body 632 and a seed layer 631interposed between the pillar body 632 and the pillar pad 53.

A height of the dummy pillar near the center of the base material 5 isless than a height of the dummy pillar away from the center of the basematerial 5. For example, the first upper dummy pillar 61 is nearer to orcloser to the center of the base material 5 than the second upper dummypillar 62 is. Thus, a height of the first upper dummy pillar 61 is lessthan a height of the second upper dummy pillar 62. Further, the secondupper dummy pillar 62 is nearer to or closer to the center of the basematerial 5 than the third upper dummy pillar 63 is. Thus, a height ofthe second upper dummy pillar 62 is less than a height of the thirdupper dummy pillar 63. Then, an upper encapsulant 45 is formed to coverthe upper electronic devices (e.g., the first upper electronic device 41and the second upper electronic device 42) and the upper dummy pillars(e.g., the first upper dummy pillar 61, the second upper dummy pillar 62and the third upper dummy pillar 63).

Then, at least one first lower electronic device 43 and at least onesecond lower electronic device 44 are electrically connected to thelower circuit layer on the lower surface 52 of the base material 5.

Referring to FIG. 33, a seed layer 86 is formed or disposed on andcovers the lower surface 52 of the base material 5, the lower electronicdevice (e.g., the first lower electronic device 43 and/or the secondlower electronic device 44), the pillar pads 54 and the bonding pads 55.

Referring to FIG. 34, a sixth photoresist layer 88 is formed or disposedon and covers the seed layer 86. Then, a plurality of openings 883 areformed in the sixth photoresist layer 88 to expose portion(s) of theseed layer 86 corresponding to the pillar pad(s) 54. Then, a fourthmetal material is formed or disposed in the openings 883 of the sixthphotoresist layer 88 by, for example, plating, so as to contact theexposed portion(s) of the seed layer 86 and form at least one pillarbody 642.

Referring to FIG. 35, the sixth photoresist layer 88 is removed. Then, aseventh photoresist layer 90 is formed or disposed on the seed layer 86to cover the pillar body 642. Then, a plurality of openings 903 isformed in the seventh photoresist layer 90 to expose portion(s) of theseed layer 86. Then, a fifth metal material is formed or disposed in theopenings 903 of the seventh photoresist layer 90 by, for example,plating, so as to contact the exposed portion(s) of the seed layer 86and form at least one pillar body 652. A height of the pillar body 652is greater than a height of the pillar body 642.

Referring to FIG. 36, the seventh photoresist layer 90 is removed. Then,portions of the seed layer 86 that is not covered by the pillar bodies642, 652 are removed by, for example, etching. Meanwhile, at least onefirst lower dummy pillar 64 and at least one second lower dummy pillar65 are formed or disposed on the pillar pads 54. In some embodiments,the first lower dummy pillar 64 includes the pillar body 642 and a seedlayer 641 interposed between the pillar body 642 and the pillar pad 54.Further, the second lower dummy pillar 65 includes the pillar body 652and a seed layer 651 interposed between the pillar body 652 and thepillar pad 54. The first lower dummy pillar 64 is nearer to or closer tothe center of the base material 5 than the second lower dummy pillar 65is. Thus, a height of the first lower dummy pillar 64 is less than aheight of the second lower dummy pillar 65.

Then, a lower encapsulant 46 is formed to cover the lower electronicdevices (e.g., the first lower electronic device 43 and the second lowerelectronic device 44) and the lower dummy pillars (e.g., the first lowerdummy pillar 64 and the second lower dummy pillar 65).

Referring to FIG. 37, a plurality of external connectors 47 (such assolder balls) are disposed on and electrically connected to the bondingpads 55 on the lower surface 52 of the base material 5. Then, asingulation process is conducted to obtain a plurality of packagestructures 4 of FIG. 8.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration only, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by such anarrangement.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation less thanor equal to ±10% of that numerical value, such as less than or equal to±5%, less than or equal to ±4%, less than or equal to ±3%, less than orequal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%,less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, a first numerical value can be deemed to be “substantially” thesame or equal to a second numerical value if the first numerical valueis within a range of variation of less than or equal to ±10% of thesecond numerical value, such as less than or equal to ±5%, less than orequal to ±4%, less than or equal to ±3%, less than or equal to ±2%, lessthan or equal to ±1%, less than or equal to ±0.5%, less than or equal to±0.1%, or less than or equal to ±0.05%. For example, “substantially”perpendicular can refer to a range of angular variation relative to 90°that is less than or equal to ±10°, such as less than or equal to ±5°,less than or equal to ±4°, less than or equal to ±3°, less than or equalto ±2°, less than or equal to ±1°, less than or equal to ±0.5°, lessthan or equal to ±0.1°, or less than or equal to ±0.05°.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm. Asurface can be deemed to be substantially flat if a displacement betweena highest point and a lowest point of the surface is no greater than 5μm, no greater than 2 μm, no greater than 1 μm, or no greater than 0.5μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and“electrical conductivity” refer to an ability to transport an electriccurrent. Electrically conductive materials typically indicate thosematerials that exhibit little or no opposition to the flow of anelectric current. One measure of electrical conductivity is Siemens permeter (S/m). Typically, an electrically conductive material is onehaving a conductivity greater than approximately 10⁴ S/m, such as atleast 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of amaterial can sometimes vary with temperature. Unless otherwisespecified, the electrical conductivity of a material is measured at roomtemperature.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

What is claimed is:
 1. A package structure, comprising: a base material;a first electronic device and a second electronic device electricallyconnected to the base material, wherein a thickness of the firstelectronic device is greater than a thickness of the second electronicdevice; a plurality of dummy pillars disposed on the base material,wherein a height of a dummy pillar near the first electronic device isgreater than a height of a dummy pillar near the second electronicdevice; and an encapsulant covering the first electronic device, thesecond electronic device and top ends of the dummy pillars.
 2. Thepackage structure of claim 1, wherein the base material includes: a mainbody including a plurality of pads; a passivation layer disposed on themain body, and defining a plurality of openings to expose the pads; anda plurality of inner vias disposed in the openings of the passivationlayer, and connecting the pads, wherein the first electronic device andthe second electronic device are electrically connected to the innervias of the base material.
 3. The package structure of claim 1, whereineach of the first electronic device and the second electronic deviceincludes at least one semiconductor chip and/or at least one passivecomponent.
 4. The package structure of claim 1, wherein the dummypillars are disposed between the first electronic device and the secondelectronic device.
 5. The package structure of claim 4, wherein adistance between a top surface of the first electronic device and a topsurface of the base material is defined as a first distance, a distancebetween a top surface of the second electronic device and the topsurface of the base material is defined as a second distance, a gapbetween the first electronic device and the second electronic device isgreater than 0.45 times a sum of the first distance and the seconddistance.
 6. The package structure of claim 1, wherein each of the dummypillars includes a pillar body and a seed layer interposed between thepillar body and the base material, and a periphery lateral surface ofthe pillar body is substantially coplanar with a periphery lateralsurface of the seed layer.
 7. The package structure of claim 1, whereinthe encapsulant includes a first insulation portion and a secondinsulation portion, the first insulation portion covers the firstelectronic device, the second electronic device and the top ends of thedummy pillars, the second insulation portion is embedded in the firstinsulation portion, and a top surface of the first insulation portion issubstantially coplanar with a top surface of the second insulationportion.
 8. The package structure of claim 7, wherein the secondinsulation portion is discontinuous.
 9. The package structure of claim1, wherein a material of the encapsulant includes an oxide material or anitride material.
 10. The package structure of claim 1, furthercomprising at least one conductive pillar extending through theencapsulant.
 11. The package structure of claim 10, wherein theconductive pillar includes a lower pillar body, an upper pillar body anda seed layer, the lower pillar body is interposed between the upperpillar body and the seed layer, the seed layer is interposed between thelower pillar body and the base material.
 12. The package structure ofclaim 10, further comprising an upper wiring structure disposed on theencapsulant and electrically connected to the base material through theat least one conductive pillar.
 13. The package structure of claim 12,wherein the upper wiring structure includes at least one dielectriclayer and at least one circuit layer.
 14. The package structure of claim12, further comprising at least one external connector disposed on andelectrically connected to the upper wiring structure.
 15. The packagestructure of claim 11, wherein the material of the lower pillar body isdifferent from the material of the upper pillar body.
 16. The packagestructure of claim 10, wherein a height of the conductive pillar isgreater than a height of each of the dummy pillars.
 17. The packagestructure of claim 4, further comprising at least one conductive pillardisposed between the first electronic device and the second electronicdevice and extending through the encapsulant.
 18. The package structureof claim 10, wherein a top surface of each of the dummy pillars iscovered by the encapsulant and a top surface of the conductive pillar isexposed from a top surface of the encapsulant.
 19. The package structureof claim 10, wherein the encapsulant includes a first insulation portionand a second insulation portion, the first insulation portion covers thefirst electronic device, the second electronic device and the top endsof the dummy pillars, the second insulation portion is embedded in thefirst insulation portion, a top surface of the first insulation portionis substantially coplanar with a top surface of the second insulationportion, and the top surface of the first insulation portion issubstantially coplanar with a top surface of the conductive pillar.